PH2729-150M_07 Datasheet, PDF (1/3 Pages) Tyco Electronics – Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty

PH2729-150M
Radar Pulsed Power Transistor
150W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
M/A-COM Products
Released, 29 Jun 07
Outline Drawing
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
V_CES
V_EBO
I_C
P_TOT
T_STG
T_J
Rating
65
3.0
15.0
500
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Specifications: T_C = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage I_C = 40mA
Collector-Emitter Leakage Current V_CE = 36V
Thermal Resistance
Vcc = 38V, Pin = 22W
Output Power
Vcc = 38V, Pin = 22W
Power Gain
Vcc = 38V, Pin = 22W
Collector Efficiency
Vcc = 38V, Pin = 22W
Input Return Loss
Pulse Droop
Load Mismatch Tolerance
Load Mismatch Stability
Vcc = 38V, Pin = 22W
Vcc = 38V, Pin = 22W
Vcc = 38V, Pin = 22W
Vcc = 38V, Pin = 22W
Frequency
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
Symbol Min
BV_CES
65
I_CES
-
R_TH(JC)
P_OUT
G_P
-
150
8.3
η_C
38
RL
-
Droop
-
VSWR-T
-
VSWR-S
-
Max Units
-
V
7.5
mA
0.4
°C/W
-
W
-
dB
-
%
-10
dB
0.7
dB
2:1
-
1.5:1
-
1
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