PH1920-33 Datasheet, PDF (1/2 Pages) Tyco Electronics – Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz

an AMP company
Wireless Bipolar Power Transistor, 33W
1930 - 1990 MHz
Features
NPN Silicon Microwave Power Transistor
Common Emitter Class AB Operation
Internal Input and Output Impedance Matching
Diffused Emitter Ballasting
Gold Metallization System
PHI 920-33
v2.01
Absolute’fiaximum
Parameter
Collector-EmitterVoltage
Collector-Emitter Voltage
Emitter-Base Voltage
CollectorCurrent
Power Dissipation
StorageTemperature
JunctionTemperature
Thermal Resistance
Ratings at 25°C
1 Symbol 1 Rating
V _CEO
V _ES
V _ES0
L
PO
T _s-r0
TJ
eJC
25
65
3.0
4.7
91
-55 to +150
200
1.6
Units
V
V
V
A
w
“C
“C
“CIW
225 (5.72)a.015 (0.38)
BASE
,181 (4.60)+.010 (0.25)
II
II
t
.087 (2.21)*.010 (0.25)
220 I--
(5.59)
,
I
1
.4~~r?:-ll(o.03~
II
UNLESS OTHERWISE NOTED, TOLERANCES ARE
INCHES r.OOS (MILLIMETERS dI.13MM)
Electrical Characteristics
Parameter
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
at 25°C
Symbol
GP
7\c
RL
VSWR-T
Min
Max Units
TestConditions
7.0
-
dB V&f5 V, I,,=200 mA, PO,,=33 W, F=l930,1990 MHz
40
-
% V,,=25 V, I,,=200 mA, PO,,=33 W, F=1930,1990 MHz
10
-
dB V,,=25 V, l,g200 mA, PO,=33 W, F=l930,1990 MHz
-
2:l
-
V,,=25 V. I,,=200 mA, PO,=33 W, F=lQ30,1990 MHz
Broadband Test Fixture Impedances
F(GHz)
.1930
z&-4
2.6 - j2.6
z,,(n)
3.3 - jl .l
1960
2.5 - j2.5
3.8 - jl .O
1990
2.4 - j2.3
4.1 - jO.8