PH1819-4N Datasheet, PDF (1/3 Pages) Tyco Electronics – Wireless Bipolar Power Transistor, 4W 1.78 - 1.90 GHz

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Wireless Bipolar Power Transistor, 4W
1.78 - 1.90 GHz
PH1819-4N
Features
NPN Silicon Microwave Power Transistor
Designed for Linear Amplifier Applications
Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP
Class A: +44 dBm Typ 3rd Order Intercept Point .
Common Emitter Configuration
Internal Input Impedance Matching
Diffused Emitter Ballasting
Gold Metallization System
,975
.‘24 77,
v2.00
i
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Rating
Units
Collector-Base Voltage
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Power Dissipation
JunctionTemperature
Storage Temperature
Thermal Resistance
Vcm
V_CES
V _ES0
‘c
PO
TJ
T_ST0
e_JC
60
60
3.0
0.7
19.5
200
-55 to +150
7.5
V
V
V
1
A
W
“C
“C
“C/W
_ ,253~.DlO
, c&43*.25)
I;;;;:;;) 1 ;
+’
;’
I
J
1
I
,
.0045? OOl:,
--A-;
,110
:2.79>
t
UN-ESS OTHERWlSE
ND-ED, TOLERANZES
ARE :M1,i ^IL^N,H. E^CTE^tR^-S^{3 t C}=,^O13M^YM)
Electrical Characteristics at 25°C
Parameter
Symbol Min Max Units
Test Conditions
Collector-Emitter Breakdown Voltage
BV,,,
60
-
V I,=5 mA
Collector-Emitter Leakage Current
Collector-Emitter Breakdown Voltage
I_CES
BVcEo 20
2.0
mA V,,=24 V
-
V I,=5 mA
Emitter-Base Breakdown Voltage
BV,,,
3.0
-
V 1,=2.5 mA
DC Forward Current Gain
Power Gain
Collector Efficiency
Input Return Loss
hFE
15
120
- V,,=5 V, I,=O.l A
GP
10
-
dB V,:=26 V, I,,-,=20mA, PO,,.=4W PEP, F=1850 MHz, AF=lOO kHz
%
25
-
% V&6 V, l,c=20 mA, Po,,r=4 W PEP, F=1850 MHz, AF=lOO kHz
RL
10
-
dB V,,t26 V, I,,=20 mA, Poe4 W PEP, Ft1850 MHz, AF=lOO kHz
Load MismatchTolerance
3rd Order IMD
VSWR-T
-
IMD,
-
1O:l
- V,,=26 V, l,c=20 mA, POUT=W4 PEP, F=1850 MHz, AF=l 00 kHz
-30 dBc V,,=26 V, I,,=20 mA, PO,=4 W PEP, F=1850 MHz, AF=~ 00 kHz
Typical Optimum Device Impedances
I
F(MHz)
q(Q)
LAO(Q)
I
1780
I
3.5+i9.3
I
3.5+j5.6
(
1850
3.1 + j9.2
4.5 + j5.2
1900
3.3 + jS.9
4.8 + j5.5