PH1819-45 Datasheet, PDF (1/2 Pages) Tyco Electronics – Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz

Wireless Bipolar Power Transistor, 45W
1805 - 1880 MHz
PHl819-45
Features
NPN Silicon Microwave Power Transistor
Common Emitter Class AI3Operation
Internal Input and Output Impedance Matching
Diffused Emitter Ballasting
Gold Metalization System
-(22.95)
.175=.315
(4.455.3a)
900
Vl .oo
Absblute Maximum Ratings at 25°C
Parameter
Symbol
Rating
Collector-Emitter Voltage
Collector-EmitterVoltage
Emitter-Base Voltage
CollectorCurrent
Power Dissipation
JunctionTemperature
Storage Temperature
Thermal Resistance
V _CES
VCES
V _EBO
Ic
PO
TJ
T _ST0
8JC
25
65
3.0
5.5
loo
200
-65 to ~200
1.3
Units
V
V
V
A
w
“C
“c
“CPA
.157r.o10
r(4.24t.251
.003L.rlOl
(.08=.03)1
J!
UNLCSS GTHCRWISE
NOTED. TOLERANCCS
IK-JES 2.005'
ARE cMILLIYETrRS
=,13HM>
Electrical Characteristics at 25°C
Parameter
Symbol Min Max Units
lest Conditions
Power Gain
Collector Efficiency
Input Return Loss
GP
8
-
dB V,,=25 V, lo=200 mA, P,e45 W, F=l805,1880 MHz
%
40
-
% V,c=25 V. lo=200 mA. PO,=45 W, F=l805,1880 MHz
RL
10
-
dB v,,=25 V, I,,=200 mA, PO,=45 W. F=1805.1880 MHz
Load Mismatch Tolerance
L
VSWR-T
-
3:l
- v,,=25 V, I,,=200 mA, PO,=45 W, F=l805,1880 MHz
Broadband Test Fixture ImDedances
F(MHz)
z,,(n)
z&3
1805
la50
I
1880
2.0 - j3.8
I
3.7 - jl.4
I
2.0 - j3.8
I
3.9 - jl.8
I
2.0 - j3.7
3.9 - j2.1
1
TEST =IXTURE
TZST FIXTURE