PH1819-33 Datasheet, PDF (1/2 Pages) Tyco Electronics – WIRELESS POWER TRANSISTOR 33W

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Wireless Power Transistor, 33W
1805 - 1880 MHz
PHl819-33
Features
l NPN Silicon Microwave Power Transistor
l Common Emitter Class AI3 Operation
l Internal Input and Output Impedance Matching
l Diffksed Emitter Ballasting
l Gold Metallization System
Absolute’ Maximum Ratings at 25°C
I ^Parameter
I Sym~l I ^Rating
Collector-EmitterVoltage
Collector-EmitterVoltage
Emitter-Base Voltage
CollectorCurrent
Power Dissipation
StorageTemperature
V _CEO
25
VcE.s
65
V _em
3.0
I ‘c I
4.7
PO
91
T _c-Fe
-55 to +150
) JunctionTemperature
) T, 1 200
Thermal Resistance
6 _JC
3.0
1 Units 1
V
V
V
I* I
w
“C
I “C I
“C/W
I-
.744 (18.90)-1
v2.01
225 (5.72)*.015 (0.38)
,
I
;48/6.30) &&y&T
225(5.72)+.015 (0.38)
1 *\I
1
f
CqO(6.35)
,181 (4.6O)zt.OlO(0.25)
t+
.087 (2.21)r.OlO (0.25)
2.20 I--
(5.59)
1
/
.co5 (0.13)+.001(0.03)
I
11 D6Ojl.52)
f
UNLESS OTHERWISE NOTED, TOLERANCES ARE
INCHES t.005’ (MILLIMETERS t0.13MM)
Electrical Characteristics at 25°C
Parameter
Symbol Min Max Units
Test Conditions
Power Gain
Collector Efficiency
Input Return Loss
r
Load Mismatch Tolerance
GP
7.0
-
dB I’,,=25 V, I,,=200 mA, PO,,=33 W, F=1805,1880 MHz
%
40
-
%
V,,=25 V, l,Q=200 mA, P,,,=33 W, F=l805,1880 MHz
RL
10
-
dB V,,=25 V, I,,=200 mA, P,,,=33 W, F=l805,1880 MHz
VSWR-T
-
2:l
- V,,=25 V, I,,=200 mA, PO,,=33 W, F=1805,1880 MHz
Broadband Test Fixture impedances
I- ~~¹⁸⁰⁵
1850
1880
I
1.8 - j5.5
I
4.0-j1.4
I
1.6 - j5.1
3.9 - jl.4
l.?-j4.8
4.0 - j0.9