PH1819-2 Datasheet, PDF (1/4 Pages) Tyco Electronics – Wireless Bipolar Power Transistor, 2W 1.78 - 1.90 GHz

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an AMP company
Wireless Bipolar Power Transistor, 2W
1.78 - 1.90 GHz
PH1819-2
Features
Designed for Cellular Base Station Applications
Class AB: -34 dBc Typ 3rd IMD at 2 Watts PEP
Class A: +43 dBm Typ 3rd Order Intercept Point
Common Emitter Configuration
Internal Input Impedance Matching
Diffused Emitter Ballasting
Absolute Maximum Ratings at 25°C
Parameter
( Collector-BaseVoltage
Symbol
Rating
1 V,,, 1 65
Units
( v-1
)Collector-EmmerVoltage
Emitter-BaseVoltage
CollectorCurrent
I-^{Power Dissipation}
Junction Temperature
StorageTemperature
Thermal Resistance
) V,,,
I
_-_
V _EBO
L
1 P,
1
TJ
T _STG
8JC
1
65
3.0
I VI
V
2.0
( 13.5
A
1 W1
200
“C
-55 to +150
“C
13
“C/W
Electrical Characteristics at 25°C
Parameter
Symbol
Min
Collector-Emitter Breakdown Voltage
BV,,.
65
Collector-EmitterLeakage Current
Collector-Emitter Breakdown Voltage
‘CES
BV,Eo
22
Collector-Emitter Breakdown Voltage
BV,.,
30
Emitter-Base Breakdown Voltage
BV,,,
3.0
DC Forward Current Gain
Power Gain
Collector Efficiency
lnout Return Loss
hFE
15
GP
10
‘IC
35
RL
10
Load Mismatch Tolerance
VSWR-T
-
3rd Order IMD
IMD,
-
Max Units
Test Conditions
-
V 1~5 mA
1.0 mA V,,=25 V
-
V I,=5 mA
-
V I,=5 mA, R,,=220 R
-
V I,=5 mA
120
- V,,=5 V, I,=200 mA
-
dB V,,=25 V, I,,=25 mA, Pout=2.0 W, F=1.78,1.85,1.90 GHz
-
% V&5 V, I,,=25 mA, Po,f2.0 W, F=l.78, 1.85, 1.9OGHz
-
dB V-,=25 V. I,,=25 mA, P*,,*=2.0 W, F=l.78,1.85,1.90 GHz
7
5:l
- V,,=25 V, I,,=25 mA, P,fi2.0 W, F=1.78,1.85,1.90 GHz
-32 dBc V,,=25 V, I,,=25 mA, P,,,=2.0 W PEP, F=1850 MHz,AF=lOO kHz
Typical Optimum Device impedances
F(GHz)
1.78
Z,,(Q)
6.6+jlO.O
ZLmP)
6.O+j12.0
1.85
8.4+jlO.l
5.7+jll.O
1.90
9.5 + j9.9
5.0 + j9.0