PH1819-10 Datasheet, PDF (1/3 Pages) Tyco Electronics – Wireless Bipolar Power Transistor, 1 OW 1.78 - 1.90 GHz

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Wireless Bipolar Power Transistor, 1OW
1.78 - 1.90 GHz
PH1819-10
Features
l Designed for Cellular Base Station Applications
l -30 dBc Typ 3rd IMD at 10 Watts PEP
l Common Emitter Configuration
l Internal Input Impedance Matching
l Diffused Emitter BaIlasting
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v2.00
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Absolute‘lblaximum Ratings at 25°C
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Electrical Characteristics at 25°C
Llli-ESS CTiERWiSE
INCHES Z.COL
NOTED. TOLERANCES ARE
(MILLIMETEPS :.I3MM)
Parameter
Symbol
Min
Max Units
Test Conditions
Collector-Emitter Breakdown Voltage
BVcE,
65
-
V I,=1 0 mA
Collector-Emitter Leakage Current
Collector-Emitter Breakdown Voltage
‘ES
BV,,,
) 2.0 ) mA ) if,,=25 v
20
-
V I,=1 0 mA
Collector-Emitter Breakdown Voltage
BV,,
30
-
V I,=1 0 mA. Q220R
Emitter-Base Breakdown Voltage
DC Forward Current Gain
Power Gain
Collector Efficiency
input Return Loss
BVESO ^3.0
hFE
15
GP
9.0
‘IC
40
RL
10
-
V IB=l 0 mA
120
- V,,=5 V, I,=250 mA
-
dB V,,=25 V, I,,=1 00 mA, P,,flO W, F=l.78 - 1.90 GHz
-
% V,,=25 V, I,,=100 mA, P,,=lO W, F=l.78 - 1.90 GHz
-
dB V,,=25 V, I,,=1 00 mA, P,,,=lO W, F=l.78 - 1.90 GHz
Load Mismatch Tolerance
VSWR
-
3.O:l - V,,=25 V, I,,=1 00 mA, POUT=01W, F=l.78 - 1.90 GHz
3rd Order IMD
IMD,
-
-28 dBc V,,=25 V, lcO=l00 mA, P,,,=lO W PEP, F=l850 MHz, AF=lOO kHz
1
Typical Optimum Device Impedances
- 2 LlAD
F(GHz)
1.78
1.85
z,,w
4.5 + j7.0
5.0 + j7.3
Zo*o(Q)
2.5 + j0.2
2.5 + j0
pq-pzj
1.90
6.0 + j6.1
2.6 + 0.2
z:N
Specifications Subject to Change Without Notice.