PH1214-IOOEL Datasheet, PDF (1/2 Pages) Tyco Electronics – Radar Pulsed Power Transistor, lOOW, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz

Radar Pulsed Power Transistor, lOOW, 2ms Pulse, 20% Duty
1.2 - 1.4 GHz
PH1214-IOOEL
Fe_a-_tu-.res- -
NPN Silicon Microwave Power Transisror
Common Base Configuration
Broadband Class C Operation
High Effkiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input Impedance Matching
Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Rating
Units
Collector-EmitterVoltage
V _CES
75
V
Emitter-Base Voltage
V _EBO
3.0
V
Collector Current (Peak)
‘c
14.1
A
Total Power Dissipation
P _TOT
214
w
JunctionTemperature
I ~ ~~~~ ^{StorageTemperature}
TJ
200
“C
I TSTG ^{1 -65 to +200 ) “C )}
i
.I22 CXX~.~:O fC.25)
E*,T:LE
L-J
.CW [G.iC:I.DG! !0.331 7
Electrical Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
lnout Return Loss
Overdrive Stability
Load Mismatch Tolerance
Load Mismatch Stablility
at 25°C
Symbol
BV,,,
ICES
R. .^,
P _OUT
GP
‘IC
RL
OD-S
VSWR-T
VSWR-S
Min
Max Units
Test Conditions
75
-
V
I,=50 mA
10
mA V,,=28 v
-
0.7 “C/W V-,=28 V, P,.,=25 W, 1==1.20, 1.30, 1.40 GHz
100
-
W V,,=28 V, P,,=25 W, F=1.20, 1.30, 1.40 GHz
6.0
-
dB V,,=28 V, P,,=25 W, F=1.20, 1.30,1.40 GHz
52
-
% V,,=28 V, P,,=25 W. F=l.20,1.30. 1.40 GHz
8
-
dB V-,=28 V, P,.,=25 W, F=1.20, 1.30, 1.40 GHz
-
+l.O
dB V,,=28 V, P,,=25 W, F=1.20, 1.30.1.40 GHz
-
3:l
-
I/,,=28 V, P,,=25 W. F=l.20, 1.30.1.40 GHz
-
1.5:l
-
V,,=28 V, P,,=25 W, F=1.20, 1.30, 1.40 GHz
Broadband Test Fixture Impedances
F(GHz)
1.20
z,,w
2.6 - j3.8
z,,m
3.0 - j2.7
1.30
3.0 - j3.4
2.4 - j2.6
1.40
3.4 - j3.1
1.9 - j2.5
TEST FIXTURE
:NPLIT
CIRCUIT
5 ⁵⁰²
Z^-1IF
--
TEST FIXTURE
3’ v ‘TPUT
CIRCUIT
1_-
-
I’ _2s;
5082
--
Specifications Subject to Change Without Notice.
g-140
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