PH1214-4M Datasheet, PDF (1/2 Pages) Tyco Electronics – Radar Pulsed Power Transistor, 4W, loops Pulse, 10% Duty 1.2 - 1.4 GHz

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Radar Pulsed
1.2 - 1.4 GHz
Power Transistor,
4W, loops
Pulse,
10% Duty
PH1214-4M
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input Impedance Matching
Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
f
_ .137* 919
~ (3.~8S.25)
I
1
.004=.001
(.10+.03)
UNLESS
O-HERW:SE
NOTED. TLERANCES
INCHES
ARE (M!LL,METERS
=.005'
~,13MM)
Electrical Characteristics at 25°C
Parameter
Collector-Emitter Breakdown Voltage
Symbol
BV,,,
Min
Max Units
65
-
V I,=8 mA
Test Conditions
Collector-Emitter Leakage Current
ICES
1.0
mA vo=40 v
Thermal Resistance
R _THUCI
8.6 “CIW V,,=28 V, P,,=800 mW, F=l.20,1.30, 1.40 GHz
Output Power
P _OUT
4.0
-
W V,,=28 V, P,,=800 mW, F=l.20,1.30,1.40 GHz
Power Gain
G.
7.0
-
dB V,,=28 V, P,.,=800 mW, F=l.20,1.30, 1.40 GHz
1 Collector Efficiency
I sic I 45 I - I ^{% 1 V,,=28 V, P,,=800 mW, F=l.20,1.30, 1.40 GHz}
I
Input Return Loss
RL
6
-
dB V,,t28 V, P,,=800 mW, F=1.20,1.30,1.40 GHz
Load Mismatch Tolerance
VSWR-T
-
3:l
-
V,,=28 V, P,,=800 mW, Fc1.20, 1.30,1.40 GHz
Load Mismatch Stablility
VSWR-S
-
1.51
- V,,=28 V, P,,=800 mW, F=l.20,1.30,1.40 GHz
Broadband Test Fixture Impedances
F(GHz)
1.20
1.30
1.40
Z,,(Q)
7.0 - j4.5
6.4 - j3.0
6.0 - jl.5
Z,,(Q)
12.0 + j24
12.5+j21
10.5 + j24
CIRCK-
-
5052
ZIF’
-⁶_-
I^’
-
-_-
TEST FIXTLiRE
OUTPUT
EIRZUIT
ZDF
50R t
I_-
9-118
Specifications Subject to Change Without Notice.
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n Asia/Pacific:
Tel. [phone]
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M/A-COM, Inc.
n Europe: Tel. [phone]
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