PH1214-0.85L Datasheet, PDF (1/2 Pages) Tyco Electronics – Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz

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Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty
1.2 - 1.4 GHz
PHI 214-0.851
Features
NPN Silicon Microwave Power Transistor
Common Emitter Configuration
Broadband Class A Operation
Matrix Geometry
Diffused Emirter Ballasting Resistors
Gold Metalization System
Internal Input Impedance Matching
Hermetic~MetalKeramic Package
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
VCES
27
V
Collector-Emitter Voltage
v _CEO
20
V
Emitter-BaseVoltage
V _ES0
3.5
V
Collector Current (Peak)
‘c
710
mA
Total Power Dissipation
P _7-7
7.8
W
JunctionTemperature
Storage Temperature
( T, ( 200
!
I “C I
T _STG
-65 to +200
“C
Electrical Characteristics at 25°C
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V,,,=22, V,_{_},_{_}(typ)=l 1.5,l,,_{_}(_-typ)=ZOO mA
Collector Efficiency
%
30
-
% ^{~,,=100mW, F=l.ZO, 1.30, 1.40GI-l~}
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Input Return Loss
RL
9
-
dB
Load Mismatch Tolerance
VSWR-T -
2:l
-
Load Mismatch Stablility
VSWR-S
-
1.51
-
Broadband Test Fixture Impedances
F(GHz)
1.20
Z,,(Q)
5.9 - j4.5
ZOF&v
7.4 + j6.3
1.30
1.40
6.4 - j4.0
7.1 - j4.4
7.5 + j7.7
7.4 + j8.9
-fST F!XTLIRT
ZIRCUIT
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9-112
Specifications Subject to Change Without Notice.
North America:
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n Asia/Pacific:
Tel. [phone]
Fax [phone]
MIA-COM, Inc.
n
Europe: Tel. ~44 (1344) 869 595
Fax t44 (1344) 300 020