PH1090-350L Datasheet, PDF (1/2 Pages) Tyco Electronics – Avionics Pulsed Power Transistor - 350 Watts,1030-1090 MHz, 250us Pulse, 10% Duty

Avionics Pulsed Power Transistor 350 Watts, 1030-1090 MHz, 250µs Pulse, 10 % Duty
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Avionics Pulsed Power Transistor - 350 Watts,
1030-1090 MHz, 250µs Pulse, 10% Duty
Features
• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package
Outline Drawing¹
Description
M/A-COM’s PH1090-350L is a silicon bipolar NPN power
transistor intended for use in L-band, 1.2 - 1.4 GHz avionics
equipment such as IFF, mode-S and TCAS systems. Designed
for common-base, class C, broadband pulsed power applica-
tions, the PH1090-350L delivers 7.5 dB of gain at 350 watts of
output power when operating with long pulse length (250µS), at
10 percent duty cycle. The transistor is housed in a 2-lead,
rectangular metal-ceramic flange package, with internal input
and output impedance matching networks. Diffused emitter
ballast resistors and gold metalization assure ruggedness and
long-term reliability.
Absolute Maximum Rating at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
@ +25°C
Storage Temperature
Junction Temperature
Symbol
V_CES
V_EBO
I_C
P_TOT
T_stg
T_j
Rating
80
3.0
17
750
-65 to +200
200
Units
V
V
A
W
°C
°C
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
Narrowband Test Fixture Impedance
F (MHz)
Z _IF (Ω)
Z _OF (Ω)
1090
2.5 - j1.5
1.1 + j0.9
TEST FIXTURE
INPUT
CIRCUIT
50Ω
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50Ω
Electrical Specifications at 25°C
Symbol
BV_CES
I_CES
R_TH(JC)
P_in
G_P
η
R_L
VSWR-T
VSWR-S
Parameter
Collector-Emitter Breakdown
Collector-Emitter Leakage
Thermal Resistance
Input Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Test Conditions
I_C=250mA
V_CE=45 V
V_CC=45 V, P_in=350 W, f=1090 MHz
V_CC=45 V, P_in=350 W, f=1090 MHz
V_CC=45 V, P_in=350 W, f=1090 MHz
V_CC=45 V, P_in=350 W, f=1090 MHz
V_CC=45 V, P_in=350 W, f=1090 MHz
V_CC=45 V, P_in=350 W, f=1090 MHz
V_CC=45 V, P_in=350 W, f=1090 MHz
Min Max Units
80
-
V
-
25 mA
-
0.2 °C/W
-
55
W
8.0
-
dB
55
-
%
9
-
dB
-
2:1
-
-
1.5:1
-
V2.00
M/A-COM Division of AMP Incorporated 3 North America: Tel. [phone], Fax [phone] Asia/Pacific: Tel.[phone], Fax [phone]
3 Europe: Tel. [phone], Fax[phone]
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.