PH0814-40 Datasheet, PDF (1/1 Pages) Tyco Electronics – Linear Power Transistor, 40W 850 - 1450 MHz

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an AMP company
Linear Power Transistor, 40W
850 - 1450 MHz
Features
l NPN Silicon Microwave Power Transistor
l Common Emitter Configuration
l Broadband Class AB Operation
l Interdigitated Geometry
l Diffused Emitter Ballasting Resistors
l Gold Metalization System
l Internal Input and Output Impedance Matching
l Hermetic Metal/Ceramic Package
Absolute‘tiaximum Ratinas at 25°C
I Parameter
/ Symbol ( Rating 1 Units 1
1 Collector-BaseVoltage
( V,,, 1
56
Iv I
Collector-Emitter Voltage
VEs
56
V
Emitter-Base Voltage
V
3.0
v
EBO
Collector Current (Peak)
‘c
5.6
A
Total Power Dissipation
PTO:
175
W
junction Temperature
TJ
200
“C
Storage Temperature
TST0 -55 to +200
“C
Thermal Resistance
8JC
1.0
“Cl-W
Electrical Characteristics at 25°C
it
UNLESS CT-IERVISE
.060’.002 f
(1521.05)
:NCH~:S ZOO5
NOTED. TCLERANCES ARE :M!, LIHETERS T,13MM,
-
I Parameter
( Symbol 1 Min 1 Max 1 Units 1
Test Conditions
Collector-Emitter Breakdown Voltage
BV,,,
56
-
V I,=50 mA
Collector-Emitter Leakage Current
Collector-Base Breakdown Voltage
ICES
BV,,,
56
5.0 mA v,,=2a v
-
V I,=50 mA
Emitter-Base Breakdown Voltage
DC Forward Current Gain
Input Power
CollectorCurrent
Input Return Loss
BvEBO
h _FE
P,N
‘c
RL
3.0
-
V I,=1 0 mA
15
100
- V,,=5.0 V, 1,=0.5 A
5.5
8.8
w V,,=28 V, I,,=12 mA, PO,,=42 W, F=1450 MHz
-
3.75 A V,,=28 V, I& 2 mA, PO,?42 W, F=l450 MHz
Saturated Output Power
Load Mismatch Tolerance
PST
VSWR-T -
Load Mismatch Tolerance
VSWR-T -
Typical Optimum Device Impedances
F(MHz)
z,(n)
850
950
1050
1150
1250
1350
1450
2.0 - j3.6
2.4 - j2.5
3.1 - il.8
3.5 - il.9
3.3 - j2.4
2.5 - j2.4
1.7-j1.8
Specifications Subject to Change Without Notice.
1.4 - j0.5
1.2-jO.l