PE3 Datasheet, PDF (1/2 Pages) Tyco Electronics – GaAs Foundry Services PROCESS PE3

GaAs Foundry Services
PROCESS PE3
Features
• 0.5 µm MBE MESFET Technology for High Power
Applications
• MMICs up to 18 GHz
• 100 mm wafer diameter
• Layout and design assistance
• Space qualification
• Custom test and packaging
Description
M/A-COM’s PE3 process utilizes molecular beam epitaxy (MBE) to
implement a MESFET active layer structure that achieves high
efficiency and breakdown for multi-watt power applications thru
18GHz. The focus is on products for moderate to high volume
applications. M/A-COM offers a full compliment of foundry
services to meet the requirements for custom designing a MMIC-
based die or packaged product.
PE3
V2.00
Typical RF Performance
FC06 (6X150) 900 um FET
Param.
MAG
PSAT
PAE
ft
Test Conditions
VDS = 8V, IDS = .40IDSS
VDS = 8V, IDS = .40IDSS
VDS = 8V, IDS = .40IDSS
VDS = 8V, IDS = .40IDSS
Freq.
2/12GHz
2/12GHz
2/12GHz
------
Typ. Val.
22/13.5dB
680/525mW/mm
50/41%
20GHz
Ordering Information
Part Number
FE43-0001
SVC6310
Description
PE3 Wafer
Mask Set
Electrical Specifications: T_A = +25 °C
Parameter
200um PCM FET
IDSS
DC GM
Vp
BVgd
RF GM
Cgs
Cgd
Cds
Ft
Sheet Resistances
NDRS (N- GaAs)
NCRS (NiCr)
GFRS (Gate Metal)
MIM Capacitors
Capacitance/unit area
Capacitor Leakage
Test Conditions
VDS = 3V, VGS = 0V
VDS = 3V, IDS = 0.5IDSS
VDS = 3V, IDS = 0.025IDSS
IG = 0.1mA/mm
VDS = 3V, IDS = 0.5IDSS
VDS = 3V, IDS = 0.5IDSS
VDS = 3V, IDS = 0.5IDSS
VDS = 3V, IDS = 0.5IDSS
VDS = 3V, IDS = 0.5IDSS
l = 20mA
l = 10mA
l = 20mA
f = 1MHz
V = 10V
Units
Min.
Typ.
Max.
mA/mm
180
240
310
mS/mm
125
150
185
V
-1.2
-1.8
-2.2
V
-11
-15
-
mS
25
32
45
pF
.140
.200
.280
pF
.015
.022
.028
pF
.025
.038
.050
GHz
20
26
34
Ohms/sq
340
375
410
Ohms/sq
42
50
58
Ohms/sq
-
.027
.040
pF/mm²
360
400
440
µA
-
-
0.5
Specifications Subject to Change Without Notice.
M/A-COM Inc.
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