MRF321 Datasheet, PDF (1/5 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large–signal driver and predriver amplifier
stages in 200–500 MHz frequency range.
• Guaranteed Performance at 400 MHz, 28 Vdc
Output Power = 10 Watts
Power Gain = 12 dB Min
Efficiency = 50% Min
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability
• Computer–Controlled Wirebonding Gives Consistent Input Impedance
Order this document
by MRF321/D
MRF321
10 W, 400 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak
Symbol
V_CEO
V_CBO
V_EBO
I_C
Value
33
60
4.0
1.1
1.5
Unit
Vdc
Vdc
Vdc
Adc
Total Device Dissipation @ T_A = 25°C (1)
P_D
Derate above 25°C
Storage Temperature Range
T_stg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
27
160
–65 to +150
Watts
mW/°C
°C
Symbol
R_θJC
CASE 244–04, STYLE 1
Max
Unit
6.4
°C/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 20 mAdc, I_B = 0)
V_(BR)CEO
33
—
—
Vdc
Collector–Emitter Breakdown Voltage
(I_C = 20 mAdc, V_BE = 0)
V_(BR)CES
60
—
—
Vdc
Collector–Base Breakdown Voltage
(I_C = 20 mAdc, I_E = 0)
V_(BR)CBO
60
—
—
Vdc
Emitter–Base Breakdown Voltage
(I_E = 2.0 mAdc, I_C = 0)
V_(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(V_CB = 30 Vdc, I_E = 0)
I_CBO
—
—
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(I_C = 500 mA, V_CE = 5.0 Vdc)
h_FE
20
—
80
—
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
1