MRF316 Datasheet, PDF (1/5 Pages) Motorola, Inc – BROADBAND RF POWER TRANSISTOR NPN SILICON

SEMICONDUCTOR TECHNICAL DATA
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by MRF316/D
The RF Line
NPN Silicon
RF Power Transistor
MRF316
. . . designed primarily for wideband large–signal output amplifier stages in the
30–200 MHz frequency range.
• Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 80 Watts
Minimum Gain = 10 dB
• Built–In Matching Network for Broadband Operation
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability Applications
80 W, 3.0–200 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak
V_CEO
V_CBO
V_EBO
I_C
Total Device Dissipation @ T_C = 25°C (1)
P_D
Derate above 25°C
Storage Temperature Range
T_stg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Value
35
65
4.0
9.0
13.5
220
1.26
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Symbol
R_θJC
CASE 316–01, STYLE 1
Max
Unit
0.8
°C/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 50 mAdc, I_B = 0)
V_(BR)CEO
35
—
—
Vdc
Collector–Emitter Breakdown Voltage
(I_C = 50 mAdc, V_BE = 0)
V_(BR)CES
65
—
—
Vdc
Collector–Base Breakdown Voltage
(I_C = 50 mAdc, I_E = 0)
V_(BR)CBO
65
—
—
Vdc
Emitter–Base Breakdown Voltage
(I_E = 5.0 mAdc, I_C = 0)
V_(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(V_CB = 30 Vdc, I_E = 0)
I_CBO
—
—
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(I_C = 4.0 Adc, V_CE = 5.0 Vdc)
h_FE
10
—
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(V_CB = 28 Vdc, I_E = 0, f = 1.0 MHz)
C_ob
—
100
130
pF
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
REV 7
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