MRF275L Datasheet, PDF (1/13 Pages) Tyco Electronics – N-CHANNEL BROADBAND RF POWER FET

SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field-Effect Transistor
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using single
ended circuits at frequencies to 500 MHz. The high power, high gain and
broadband performance of this device makes possible solid state transmitters
for FM broadcast or TV channel frequency bands.
• Guaranteed Performance @ 500 MHz, 28 Vdc
Output Power — 100 Watts
Power Gain — 8.8 dB Typ
Efficiency — 55% Typ
D
• 100% Ruggedness Tested At Rated Output Power
• Low Thermal Resistance
• Low Crss — 17 pF Typ @ VDS = 28 Volts
G
S
Order this document
by MRF275L/D
MRF275L
100 W, 28 V, 500 MHz
N–CHANNEL
BROADBAND
RF POWER FET
CASE 333–04, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
Gate–Body Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
Symbol
VDSS
VGS
ID
PD
Tstg
TJ
Symbol
R_θJC
Min
65
—
—
Value
65
± 20
13
270
1.54
– 65 to +150
200
Max
0.65
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
Typ
Max
Unit
—
—
Vdc
—
2.5
mAdc
—
1.0
µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV2
1