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MRF173 Datasheet, PDF (1/8 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER MOSFETs
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field Effect Transistor
N–Channel Enhancement Mode MOSFET
Designed for broadband commercial and military applications up to 200 MHz
frequency range. The high–power, high–gain and broadband performance of
this device make possible solid state transmitters for FM broadcast or TV
channel frequency bands.
• Guaranteed Performance at 150 MHz, 28 V:
Output Power = 80 W
Gain = 11 dB (13 dB Typ)
Efficiency = 55% Min. (60% Typ)
D
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability
G
• Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz
• Excellent Thermal Stability; Suited for Class A Operation
S
Order this document
by MRF173/D
MRF173
80 W, 28 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 211–11, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Symbol
Value
65
65
±40
9.0
220
1.26
–65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Max
Unit
0.8
°C/W
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage (VDS = 0 V, VGS = 0 V) ID = 50 mA
V(BR)DSS
65
—
—
V
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V)
IDSS
—
—
2.0
mA
Gate–Source Leakage Current (VGS = 40 V, VDS = 0 V)
IGSS
—
—
1.0
µA
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 50 mA)
Drain–Source On–Voltage (VDS(on), VGS = 10 V, ID = 3.0 A)
Forward Transconductance (VDS = 10 V, ID = 2.0 A)
VGS(th)
1.0
3.0
6.0
V
VDS(on)
—
—
1.4
V
gfs
1.8
2.2
—
mhos
(continued)
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
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