MRF151G Datasheet, PDF (1/9 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER MOSFET

SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode MOSFET
Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.
• Guaranteed Performance at 175 MHz, 50 V:
Output Power — 300 W
Gain — 14 dB (16 dB Typ)
Efficiency — 50%
• Low Thermal Resistance — 0.35°C/W
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability
D
G
S
G
(FLANGE)
D
Order this document
by MRF151G/D
MRF151G
300 W, 50 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375–04, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
V_DSS
V_DGO
V_GS
I_D
P_D
T_stg
T_J
Symbol
R_θJC
Value
125
125
± 40
40
500
2.85
– 65 to +150
200
Max
0.35
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
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