MRF10120 Datasheet, PDF (1/4 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Long Pulse
Power Transistor
Designed for 960–1215 MHz long pulse common base amplifier applications
such as JTIDS and Mode S transmitters.
• Guaranteed Performance @ 1.215 GHz, 36 Vdc
Output Power = 120 Watts Peak
Gain = 7.6 dB Min., 8.5 dB (Typ)
• 100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR
• Hermetically Sealed Industry Standard Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input and Output Matching for Broadband Operation
Order this document
by MRF10120/D
MRF10120
120 W (PEAK), 960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 355C–02, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak (1)
Total Device Dissipation @ T_C = 25°C (1), (2)
Derate above 25°C
V_CES
V_CBO
V_EBO
I_C
P_D
55
55
3.5
15
380
2.17
Vdc
Vdc
Vdc
Adc
Watts
W/°C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
T_stg
–65 to +200
°C
T_J
200
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (3)
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
R_θJC
Min
0.46
Typ
Max
°C/W
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I_C = 60 mAdc, V_BE = 0)
V_(BR)CES
55
—
—
Vdc
Collector–Base Breakdown Voltage (I_C = 60 mAdc, I_E = 0)
V_(BR)CBO
55
—
—
Vdc
Emitter–Base Breakdown Voltage (I_E = 10 mAdc, I_C = 0)
V_(BR)EBO
3.5
—
—
Vdc
Collector Cutoff Current (V_CB = 36 Vdc, I_E = 0)
I_CBO
—
—
25
mAdc
NOTES:
(continued)
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
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