MRF1004MB Datasheet, PDF (1/5 Pages) Tyco Electronics – MICROWAVE POWER TRANSISTORS NPN SILICON

SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1004MB/D
The RF Line
Microwave Pulse
Power Transistors
Designed for Class B and C common base amplifier applications in short and
long pulse TACAN, IFF, DME, and radar transmitters.
• Guaranteed Performance @ 1090 MHz, 35 Vdc
Output Power = 4.0 Watts Peak
Minimum Gain = 10 dB
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Industry Standard Package
• Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
• Internal Input Matching for Broadband Operation
MRF1004MB
4.0 W, 960–1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332A–03, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T_C = 25°C (1)
Derate above 25°C
V_CEO
V_CBO
V_EBO
I_C
P_D
20
Vdc
50
Vdc
3.5
Vdc
250
mAdc
7.0
Watts
40
mW/°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
T_stg
Symbol
–65 to +150
°C
Max
Unit
Thermal Resistance, Junction to Case (2)
R_θJC
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
25
Typ
Max
°C/W
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 5.0 mAdc, I_B = 0)
V_(BR)CEO
20
—
—
Vdc
Collector–Emitter Breakdown Voltage
(I_C = 5.0 mAdc, V_BE = 0)
V_(BR)CES
50
—
—
Vdc
Collector–Base Breakdown Voltage
(I_C = 5.0 mAdc, I_E = 0)
V_(BR)CBO
50
—
—
Vdc
Emitter–Base Breakdown Voltage
(I_E = 1.0 mAdc, I_C = 0)
V_(BR)EBO
3.5
—
—
Vdc
Collector Cutoff Current
(V_CB = 35 Vdc, I_E = 0)
I_CBO
—
—
0.5
mAdc
ON CHARACTERISTICS
DC Current Gain
(I_C = 75 mAdc, V_CE = 5.0 Vdc)
h_FE
10
—
100
—
NOTES:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 8
1