MRF10005 Datasheet, PDF (1/4 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Power Transistor
. . . designed for CW and long pulsed common base amplifier applications,
such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high
overall duty cycles.
• Guaranteed Performance @ 1.215 GHz, 28 Vdc
Output Power = 5.0 Watts CW
Minimum Gain = 8.5 dB, 10.3 dB (Typ)
• RF Performance Curves given for 28 Vdc and 36 Vdc Operation
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Hermetically Sealed Industry Standard Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input Matching for Broadband Operation
Order this document
by MRF10005/D
MRF10005
5.0 W, 960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 336E–02, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous (1)
Total Device Dissipation @ T_A = 25°C (1)
Derate above 25°C
V_CES
V_CBO
V_EBO
I_C
P_D
55
Vdc
55
Vdc
3.5
Vdc
1.25
mAdc
25
Watt
143
mW/°C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
T_stg
T_J
Symbol
–65 to +200
200
Max
°C
°C
Unit
Thermal Resistance, Junction to Case (2)
R_θJC
7.0
°C/W
NOTES:
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
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