MASWSS0006 Datasheet, PDF (1/5 Pages) Tyco Electronics – GaAs SP2T 2.5V High Power Switch DC - 3 GHz

GaAs SP2T 2.5V High Power Switch
DC - 3 GHz
Jan 17 2002
Preliminary
Features
• Low Voltage Operation 2.5V
• Low Harmonics > 65 dBc at +34 dBm & 1 GHz
• Low Insertion Loss 0.45 dB at 1 GHz
• High Isolation 18.5 dB at 2 GHz
• Miniature SOT-26 Package
• 0.5 micron GaAs pHEMT Process
Description
M/A-COM’s MASWSS0006 is a GaAs PHEMT MMIC
single pole two throw (SP2T) high power switch in a low
cost miniature SOT-26 package. The MASWSS0006 is
ideally suited for applications where high power, low con-
trol voltage, low insertion loss, high isolation, small size
and low cost are required. Typical applications are for
GSM and DCS handset systems that connect separate
transmit and receive functions to a common antenna, as
well as other related handset and general purpose appli-
cations. This part can be used in all systems operating
up to 3 GHz requiring high power at low control voltage.
The MASWSS0006 is fabricated using a 0.5 micron gate
length GaAs PHEMT process. The process features full
passivation for performance and reliability.
Absolute Maximum Ratings ¹
Parameter
Max Input Power (0.5 - 3 GHz,
2.5V Control)
Operating Voltage
Operating Temperature
Storage Temperature
Absolute
Maximum
+38 dBm
+8.5 volts
-40 ^oC to +85 ^oC
-65 ^oC to +150 ^oC
Functional Schematic
PIN 1
PIN 6
39 pF
RF1
GND
RF2
39 pF
V1
RFC
V2
39 pF
Pin Configuration
PIN
PIN Name
No.
1
RF1
2
GND
3
RF2
4
V1
5
RFC
6
V2
Description
RF Port 1
RF Ground
RF Port 2
Control 1
RF Common Port
Control 2
1. Exceeding any one or combination of these limits may
cause permanent damage.