MASW20000 Datasheet, PDF (1/2 Pages) Tyco Electronics – GaAs SPDT Switch DC - 20 GHz

GaAs SPDT Switch
DC - 20 GHz
Features
q Very Broadband Performance
q Low Insertion Loss, 1.75 dB Typical @ 18 GHz
q High Isolation, 50 dB Typical @ 18 GHz
q Fast Switching Time, 2 nS Typical
q Reflective Configuration
q Ultra Low DC Power Consumption
q Via Hole Grounding
Guaranteed Specifications* @ +25°C**
Frequency Range
DC-20.0 GHz
Insertion Loss
DC-10.0 GHz
DC-18.0 GHz
DC-20.0 GHz
1.7 dB Max
2.1 dB Max
2.5 dB Max
VSWR
DC-10.0 GHz
DC-18.0 GHz
DC-20.0 GHz
1.60:1 Max
1.80:1 Max
2.00:1 Max
Isolation
DC-10.0 GHz
DC-18.0 GHz
DC-20.0 GHz
50 dB Min
42 dB Min
40 dB Min
Operating Characteristics
Impedance
Switching Characteristics
Trise, Tfall (10/90% or 90/10% RF)
2 ns Typ
Ton, Toff (50% CTL to 90/10% RF)
Transients (in-Band)
Input Power for 1 dB Compression
Control Voltages (Vdc)
0.5-20 GHz
0.05 GHz
50 Ω Nominal
3 ns Typ
20 mV Typ
0/-5
+25 dBm Typ
+18 dBm Typ
Intermodulation Intercept point (for two-tone input power up to +5 dBm)
Intercept Points
IP2
IP3
0.5-20 GHz
0.05 GHz
+59 dBm
+43 dBm Typ
+27 dBm Typ
Control Voltages (Complimentary Logic)
Vin Low
Vin Hi
Die Size
0 to -0.2 V @ 5 µA Max
-5 V @50 µA Max
0.083”x 0.035”X 0.004”
(2.10mm X 0.89mm X 0.10mm)
* Wafer level data.All specifications apply with 50 Ω impedance connected
to all RF ports, 0 and -5 Vdc control voltages.
** Loss change 0.0025 dB/°C. (From -55°C to +85°C)
MASW20000
GND RF GND
V 2.00
GND
RF1
GND
GND
RF2
GND
A1 B2 B1 A2
Typical Performance
INSERTION LOSS (dB)
2.0
1.5
1.0
0.5
0.0 ₀
4
8
12
16
20
ISOLATION (dB)
80
60
40
20
00
4
VSWR
2.0
8
12
16
20
1.8
1.6
Output
1.4
Input
1.2
1.0
0
4
8
12
16
20
FREQUENCY (GHz)
Schematic