MAPRST2729-170M Datasheet, PDF (1/1 Pages) Tyco Electronics – RADAR PULSED POWER TRANSISTOR

Preliminary Specification,
Rev 03/30/2005
MAPRST2729-170M
RADAR PULSED POWER TRANSISTOR
170 Wpk, 2700 - 2900 MHz, 100μs Pulse Width, 10% Duty Cycle
FEATURES
• Designed for ATC Radar Applications
• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metallization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package
ABSOLUTE MAXIMUM RATINGS AT 25°C
Parameter
Collector-Emitter Voltage
Symbol
V_CES
Rating
65
Emitter-Base Voltage
V_EBO
3.0
Collector Current (Peak)
I_C
27
Power Dissipation @ +25°C
P_D
TBD
Storage Temperature
T_STG
-65 to +200
Junction Temperature
T_J
200
Units
V
V
A
W
°C
°C
OUTLINE DRAWING
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Collector-Emitter Breakdown
Voltage
Collector-Emitter Leakage
Current
Thermal Resistance
Symbol
BV_CES
I_CES
R_TH
Min
65
-
-
Power Output
P_out
170
Power Gain
Collector Efficiency
G_P
8.5
η_C
40
Input Return Loss
RL
10
Load Mismatch Stability
VSWR-S
-
Load Mismatch Tolerance
VSWR-T
-
Max
-
15
.25 (TBD)
-
-
-
-
1.5:1
2:1
Units
V
mA
°C/W
Wpk
dB
%
dB
-
-
I_C=50mA
Test Conditions
V_CE=36V
V_CC=36 V, P_in=24 W, F=2.7, 2.8 and 2.9 GHz
V_CC=36 V, P_in=24 W, F=2.7, 2.8 and 2.9 GHz
V_CC=36 V, P_in=24 W, F=2.7, 2.8 and 2.9 GHz
V_CC=36 V, P_in=24 W, F=2.7, 2.8 and 2.9 GHz
V_CC=36 V, P_in=24 W, F=2.7, 2.8 and 2.9 GHz
V_CC=36 V, P_in=24 W, F=2.7, 2.8 and 2.9 GHz
V_CC=36 V, P_in=24 W, F=2.7, 2.8 and 2.9 GHz
BROADBAND TEST FIXTURE IMPEDANCE
F (MHz)
Z _IF (Ω)
Z _OF (Ω)
2700
(TBD)
(TBD)
2800
(TBD)
(TBD)
2900
(TBD)
(TBD)
M/A-COM, RF POWER INNOVATIONS • 1742 CRENSHAW BLVD • TORRANCE, CA 90501
[phone] • FAX [phone]
M/A-COM RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE.