MAPRST1214-150UF Datasheet, PDF (1/1 Pages) Tyco Electronics – RADAR PULSED POWER TRANSISTOR

Preliminary Datasheet
Revision 01/14/2003
MAPRST1214-150UF
RADAR PULSED POWER TRANSISTOR
150W, 1.2-1.4 GHz, 6ms Pulse Width, 25% Duty Cycle
FEATURES
OUTLINE DRAWING
∗ NPN Silicon Microwave Power Transistor
∗ Common Base Configuration
∗ Broadband Class C Operation
∗ High Efficiency Interdigitated Geometry
∗ Diffused Emitter Ballasting Resistors
∗ Gold Metalization System
∗ Internal Input and Output Impedance Matching
∗ Hermetic Metal/Ceramic Package
∗ Typcial Second Harmonic Level < -30dBc
ABSOLUTE MAXIMUM RATINGS AT 25°C
Parameter
Symbol Rating
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation @
+25°C
Junction Temperature
Storage Temperature
V_CES
V_EBO
I_C
P_TOT
T_J
T_STG
70
4.0
19.5
580
200
-65 to +200
Units
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min
Collector-Emitter Breakdown
Voltage
BV_CES
70
Collector-Emitter Leakage Current
I_CES
-
Thermal Resistance
Output Power
Power Gain
Gain Flatness
Collector Efficiency
R_TH
-
P_OUT
150
G_P
7.4
ΔG
-
η_c
45
Input Return Loss
Amplitude Pulse Droop
RL
9
Droop
-
Load Mismatch Stability
VSWR-S
-
Load Mismatch Tolerance
VSWR-T
-
BROADBAND TEST FIXTURE IMPEDANCE
F (MHz)
1200
1300
1400
Z _IF (Ω)
1.7 - j1.8
1.6 - j1.3
1.4 - j1.0
Z _OF (Ω)
2.0 - j2.3
1.95 - j2.0
1.8 - j1.85
Max
-
4.0
0.3
-
-
1.25
-
-
0.5
1.5:1
3:1
Units
V
mA
°C/W
W
dB
dB
%
dB
dB
-
-
Test Conditions
I_C = 10 mA
V_CE = 40V
V_CC = 36V, Pin = 27W, F= 1.2, 1.3, 1.4 GHz
V_CC = 36V, Pin = 27W, F= 1.2, 1.3, 1.4 GHz
V_CC = 36V, Pin = 27W, F= 1.2, 1.3, 1.4 GHz
V_CC = 36V, P_IN = 27W, F= 1.2, 1.3, 1.4 GHz
V_CC = 36V, P_IN = 27W, F= 1.2, 1.3, 1.4 GHz
V_CC = 36V, P_IN = 27W, F= 1.2, 1.3, 1.4 GHz
V_CC = 36V, P_IN = 27W, F= 1.2, 1.3, 1.4 GHz
V_CC = 36V, P_IN = 27W, F= 1.2, 1.3, 1.4 GHz
V_CC = 36V, P_IN = 27W, F= 1.2, 1.3, 1.4 GHz
TEST FIXTURE
INPUT
CIRCUIT
50Ω
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50Ω
1