MAPRST1030-1KS Datasheet, PDF (1/3 Pages) Tyco Electronics – Avionics Pulsed RF Power Transistor

Advanced Datasheet
Rev 17-06-2005
Avionics Pulsed RF Power Transistor
1000 Watts, 1030 MHz, 10µs Pulse Width, 1% Duty Cycle
MAPRST1030-1KS
Features
• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package
Outline Drawing
MAXIMUM RATINGS AT 25°C
Parameter
Symbol
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation @ +25°
C
Junction Temperature
Storage Temperature
V_CES
V_EBO
I_C
P_TOT
T_J
T_STG
Rating
65
3.0
250
11.6
200
-65 to +200
Units
V
V
A
kW
°C
°C
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol
Min
Collector-Emitter Breakdown Voltage
BV_CES
65
Collector-Emitter Leakage Current
I_CES
-
Thermal Resistance
R_TH
-
RF Power Gain
P_G
8.0
Collector Efficiency
Input Return Loss
η_C
45
RL
-
Load Mismatch Stability
VSWR-S
-
Load Mismatch Tolerance
VSWR-T
-
Max
-
30
0.015
-
-
-10
1.5:1
3:1
Units
V
mA
°C/W
dB
%
dB
-
-
Test Conditions
I_C=250mA
V_CE=50V
V_CC=50 V, P_OUT=1000 W, F= 1.03 GHz
V_CC=50 V, P_OUT=1000 W, F= 1.03 GHz
V_CC=50 V, P_OUT=1000 W, F= 1.03 GHz
V_CC=50 V, P_OUT=1000 W, F= 1.03 GHz
V_CC=50 V, P_OUT=1000 W, F= 1.03 GHz
V_CC=50 V, P_OUT=1000 W, F= 1.03 GHz
BROADBAND TEST FIXTURE IMPEDANCE
F (GHz)
1.03
Z _IF (Ω)
1.8 - j2.2
Z _OF (Ω)
0.5 - j1.0
M/A-COM RF Power Innovations • 1742 CRENSHAW BLVD • TORRANCE, CA 90501 • [phone] • FAX [phone]
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