MAPRST0912-350 Datasheet, PDF (1/2 Pages) Tyco Electronics – AVIONICS PULSED POWER TRANSISTOR

Preliminary Specification,
Rev 02/03/2004
MAPRST0912-350
AVIONICS PULSED POWER TRANSISTOR
350 Watts, 960 - 1215 MHz, 10μs Pulse Width, 10% Duty Cycle
FEATURES
OUTLINE DRAWING
∗ NPN Silicon Microwave Power Transistor
∗ Common Base Configuration
∗ Broadband Class C Operation
∗ High Efficiency Interdigitated Geometry
∗ Diffused Emitter Ballasting Resistors
∗ Gold Metalization System
∗ Internal Input and Output Impedance Matching
∗ Hermetic Metal/Ceramic Package
ABSOLUTE MAXIMUM RATINGS AT 25°C
Parameter
Symbol Rating
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation @
+25°C
Junction Temperature
Storage Temperature
V_CES
V_EBO
I_C
P_TOT
T_J
T_STG
65
3.0
32.5
1340
200
-65 to +200
Units
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min
Collector-Emitter Breakdown Voltage
BV_CES
65
Collector-Emitter Leakage Current
I_CES
-
Thermal Resistance
R_TH
-
Output Power
Collector Efficiency
P_OUT
350
η_C
45
Input Return Loss
RL
9
Load Mismatch Tolerance
VSWR-T
-
Load Mismatch Stability
VSWR-S
-
BROADBAND TEST FIXTURE IMPEDANCE
F (MHz)
Z _IF (Ω)
Z _OF (Ω)
960
1.8 - j1.7
1.7 - j1.7
1030
1.7 - j1.4
1.8 - j1.2
1090
1.6 - j1.2
1.9 - j0.8
1150
1.4 - j1.0
1.9 - j0.6
1215
1.2 - j0.8
2.0 - j0.2
Max
-
15
0.13
-
-
-
10:1
1.5:1
Units
V
mA
°C/W
W
%
dB
-
-
Test Conditions
I_C=50mA
V_CE=50V
V_CC=50 V, P_IN=40 W, F=960, 1090, 1215 MHz
V_CC=50 V, P_IN=40 W, F=960, 1090, 1215 MHz
V_CC=50 V, P_IN=40 W, F=960, 1090, 1215 MHz
V_CC=50 V, P_IN=40 W, F=960, 1090, 1215 MHz
V_CC=50 V, P_IN=40 W, F=960 MHz
V_CC=50 V, P_IN=40 W, F=960, 1090, 1215 MHz
All spurious signals shall be < -60dBc below
carrier, except F = Fo ± ½ Fo shall be < -40dBc
M/A-COM RF POWER INNOVATIONS • 1742 CRENSHAW BLVD • TORRANCE, CA 90501
[phone] • FAX [phone]
M/A-COM RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE.
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