MAPLST2122-015CF Datasheet, PDF (1/5 Pages) Tyco Electronics – RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V

RF Power Field Effect Transistor
LDMOS, 2110 — 2170 MHz, 15W, 28V
8/20/03
Preliminary
Features
Designed for W-CDMA base station
applications in the 2.1 to 2.2 GHz Frequency
Band. Suitable for TDMA, CDMA, and
multicarrier power amplifier applications.
Q 15W Output Power at P_1dB (CW)
Q 12dB Minimum Gain at P_1dB (CW)
Q W-CDMA Typical Performance:
(28V_DC, -45dBc ACPR, 5MHz offset,
4.096MHz BW)
Q Output Power: 2.2W (typ.)
Q Gain: 13dB (typ.)
Q Efficiency: 17% (typ.)
Q 10:1 VSWR Ruggedness (CW @ 15W,
28V, 2110MHz)
Package Style
MAPLST2122-015CF
Maximum Ratings
Drain—Source Voltage
Gate—Source Voltage
Parameter
Total Power Dissipation @ T_C = 25 °C
Storage Temperature
Junction Temperature
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
V_DSS
V_GS
P_D
T_STG
T_J
Rating
65
20
54.7
-40 to +150
+200
Units
V_dc
V_dc
W
°C
°C
Symbol
R_ΘJC
Max
3.2
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.