MAPLST1900-060CF Datasheet, PDF (1/5 Pages) Tyco Electronics – RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 60W, 26V

RF Power Field Effect Transistor
LDMOS, 1890 — 1925 MHz, 60W, 26V
10/31/03
Preliminary
Features
Designed for PHS applications in the
1890-1925 MHz frequency band.
Q Typical performance in PHS mode at
-65 dBc ACPR (600kHz):
Q Average Output Power: 16W
Q Gain: 12.5dB (typ.)
Q Efficiency: 26% (typ.)
Q 10:1 VSWR Ruggedness at 16W, 26V,
1890MHz)
Package Style
MAPLST1900-060CF
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Total Power Dissipation @ T_C = 25 °C
Storage Temperature
Junction Temperature
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
V_DSS
V_GS
P_D
T_STG
T_J
Rating
65
20
97
-40 to +150
+200
Units
V_dc
V_dc
W
°C
°C
Symbol
R_ΘJC
Max
1.0
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.