MAPLST1820-060CF Datasheet, PDF (1/4 Pages) Tyco Electronics – RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 60W, 26V

RF Power Field Effect Transistor
LDMOS, 1800 — 2000 MHz, 60W, 26V
5/24/04
Preliminary
Features
Package Style
Designed for base station applications in the
1805-1880MHz or 1930-1990MHz Frequency
Band. Suitable for GSM, EDGE, TDMA,
CDMA, and multi-carrier amplifier
applications
Typical EDGE performance @ 1880MHz,
26V, Idq=900mA:
Output Power: 30W
Power Gain: 13dB (typ.)
Efficiency: 35% (typ.)
P-238
Maximum Ratings
Drain—Source Voltage
Parameter
Gate—Source Voltage
Total Power Dissipation @ T_C = 25 °C
Storage Temperature
Junction Temperature
Symbol
V_DSS
V_GS
P_D
T_STG
T_J
Rating
65
+20, -20
206
-40 to +150
+200
Units
V_dc
V_dc
W
°C
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R_ΘJC
Max
0.85
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.