MAPLST1820-030CF Datasheet, PDF (1/5 Pages) Tyco Electronics – RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 30W, 26V

RF Power Field Effect Transistor
LDMOS, 1800 — 2000 MHz, 30W, 26V
5/14/04
Preliminary
Features
Package Style
Designed for base station applications in the
1805-1880MHz or 1930-1990MHz Frequency
Band. Suitable for GSM, EDGE, TDMA,
CDMA, and multi-carrier amplifier
applications
Q 30W CW Output Power at P_1dB
Q 13dB Gain at P_1dB
Q 45% Drain Efficiency at P_1dB
Q 10:1 VSWR Ruggedness (CW @ 30W,
26V, 1900MHz)
Q Internal input and output matching
P-237
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Drain Current — Continuous
Total Power Dissipation @ T_C = 25 °C
Storage Temperature
Junction Temperature
Symbol
V_DSS
V_GS
I_D
P_D
T_STG
T_J
Rating
65
20
10
97
-40 to +150
+200
Units
V_dc
V_dc
A_dc
W
°C
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R_ΘJC
Max
1.8
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.