MAPLST1617-030CF Datasheet, PDF (1/5 Pages) Tyco Electronics – RF Power Field Effect Transistor LDMOS, 1600 - 1700 MHz, 30W, 28V

RF Power Field Effect Transistor
LDMOS, 1600 — 1700 MHz, 30W, 28V
5/5/05
Preliminary
Features
Designed for INMARSAT applications in the
1620-1670 MHz frequency band.
Typical Two Tone Performance
(IMD=-30 dBc):
Average Output Power: 15W
Gain: 14dB (typ.)
Efficiency: 38% (typ.)
10:1 VSWR Ruggedness at 30W, 28V,
1670MHz)
Package Style
MAPLST1617-030CF
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Total Power Dissipation @ T_C = 25 °C
Storage Temperature
Junction Temperature
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
V_DSS
V_GS
P_D
T_STG
T_J
Rating
65
20
97
-40 to +150
+200
Units
V_dc
V_dc
W
°C
°C
Symbol
R_ΘJC
Max
1.8
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.