MAPLST0822-002PP Datasheet, PDF (1/10 Pages) Tyco Electronics – RF Power Field Effect Transistor LDMOS, 800-2200 MHz, 2W, 28V

RF Power Field Effect Transistor
LDMOS, 800—2200 MHz, 2W, 28V
4/14/05
Preliminary
Features
Package Style
Designed for broadband commercial
applications up to 2.2GHz
High Gain, High Efficiency and High
Linearity
Ease of Design for Gain and Insertion Phase
Flatness
Excellent Thermal Stability
W-CDMA Performance at 2.17GHz, 28Vdc
Average Output Power: 28dBm @ -39dBc
ACPR
Gain: 14.5dB (typ.)
Efficiency: 23% (typ.)
10:1 VSWR Ruggedness at 2W (CW), 28V,
2.11GHz
PFP-16
Performance at 960MHz, 26Vdc, P_1dB
Average Output Power: 2W min.
Gain: 20dB (typ.)
Efficiency: 50% (typ.)
10:1 VSWR Ruggedness at 2W, 26V,
960MHz
Maximum Ratings
Drain—Source Voltage
Parameter
Gate—Source Voltage
Total Power Dissipation @ T_C = 25 °C
Storage Temperature
Junction Temperature
Symbol
V_DSS
V_GS
P_D
T_STG
T_J
Rating
65
+15, -0.5
6.9
-65 to +150
150
Units
V_dc
V_dc
W
°C
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R_ΘJC
Max
18
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packag-
ing MOS devices should be observed.