MAPLST0810-030CF-05-2004 Datasheet, PDF (1/4 Pages) Tyco Electronics – RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V

RF Power Field Effect Transistor
LDMOS, 865 — 960 MHz, 30W, 26V
5/14/04
Preliminary
Features
Package Style
Q Designed for 865 to 960 MHz Broadband
Commercial and Base Station
Applications.
Q Typical CW RF Performance at 960MHz,
26V_DC:
Q P_OUT: 30W (P_1dB)
Q Gain: 18dB
Q Efficiency: 50%
Q Ruggedness: 10:1 VSWR @ 30W CW,
26V, 925MHz
Q High Gain, High Efficiency and High
Linearity
Q Excellent Thermal Stability
P-239
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Total Power Dissipation @ T_C = 25 °C
Storage Temperature
Junction Temperature
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
V_DSS
V_GS
P_D
T_STG
T_J
Rating
65
20
97
-40 to +150
+200
Units
V_dc
V_dc
W
°C
°C
Symbol
R_ΘJC
Max
1.8
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packag-
ing MOS devices should be observed.