MAPL-000817-015CPC-072706 Datasheet, PDF (1/5 Pages) Tyco Electronics – RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V

RF Power Field Effect Transistor
LDMOS, 800—1700 MHz, 15W, 26V
7/27/06
Preliminary
Features
• Designed for broadband commercial
applications up to 1.7GHz
• High Gain, High Efficiency and High
Linearity
• Typical P1dB performance at 960MHz,
26Vdc, CW
• Typical Power Output: 16.5W
• Gain: 17.0dB
• Efficiency: 50%
• 10:1 VSWR Ruggedness at 15W,
26Vdc, 960MHz
Package Style
MAPL-000817-015CPC
Maximum Ratings
Drain—Source Voltage
Parameter
Gate—Source Voltage
Total Power Dissipation @ T_C = 25 °C
Storage Temperature
Junction Temperature
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
V_DSS
V_GS
P_D
T_STG
T_J
Rating
65
+20, -20
31.25
-65 to +150
150
Units
V_dc
V_dc
W
°C
°C
Symbol
R_ΘJC
Max
4
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packag-
ing MOS devices should be observed.