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MAPL-000817-015C00 Datasheet, PDF (1/8 Pages) Tyco Electronics – RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V | |||
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RF Power Field Effect Transistor
LDMOS, 800â1700 MHz, 15W, 26V
1/11/06
Preliminary
Features
⢠Designed for broadband commercial
applications up to 1.7GHz
⢠High Gain, High Efficiency and High
Linearity
⢠Typical P1dB performance at 960MHz,
26Vdc, CW
⢠Typical Power Output: 16.5W
⢠Gain: 16.5dB
⢠Efficiency: 50%
⢠10:1 VSWR Ruggedness at 15W,
26Vdc, 960MHz
Package Style
MAPL-000817-015C00
Maximum Ratings
DrainâSource Voltage
Parameter
GateâSource Voltage
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
TSTG
TJ
Rating
65
+20, -20
31.25
-65 to +150
150
Units
Vdc
Vdc
W
°C
°C
Symbol
RÎJC
Max
4
Unit
ºC/W
NOTEâCAUTIONâMOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packag-
ing MOS devices should be observed.
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