MA4VAT2007-1061T Datasheet, PDF (1/4 Pages) Tyco Electronics – High IIP3 PIN Diode Variable Attenuator 1.70-2.00 GHz

High IIP3 PIN Diode Variable Attenuator
1.70-2.00 GHz
Features
• RoHs and ELV compliant
• Bandwidth: 1.70 GHz to 2.00 GHz
• 1.4 dB Insertion Loss, Typical
• 1.4:1 VSWR, Typical
• 23 dB Attenuation, Typical
• 50 dBm Input IP3, Typical
(1 MHz Offset, @ + 0 dBm Pinc)
• 0 - 2.77 Volts Control Voltage @ 3 mA Typical
Extra Features
• Covers the following Bands:
• DCS
• PCS
• UMTS/WCDMA/CDMA
• TD-S_CDMA
• SCDMA
• Usable Bandwidth: 1.50 GHz to 2.50 GHz
• 2.0 dB Insertion Loss, Typical
• 2:1 VSWR, Typical
• 18.5 dB Attenuation, Typical
Description and Applications
M/A-COM’s MA4VAT2007-1061T is a HMIC PIN
Diode Variable Attenuator which utilizes an
integrated 90 degree 3dB hybrid with a pair of
Silicon PIN Diodes to perform the required attenuation
function as D.C. Voltage (Current) is applied.
This device operates from 0 to 2.77 Volts at 3.0mA
typical control current for maximum attenuation. The
user can add external biasing resistors to the bias
ports for higher voltage requirements as required.
M/A-COM’s MA4VAT2007-1061T PIN Diode Vari-
able Attenuator is designed for AGC Circuit Applica-
tions requiring:
• Lower Insertion Loss
• Lower distortion through attenuation
• Large dynamic range for wide spread spectrum
applications
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
MA4VAT2007-1061T
V2
PIN Configuration
(Topview)
PIN Configuration (Topview)
PIN
Function
Comments
1
DC1
2
GND
3
GND
4
RFin/out
Symetrical as RF Input/Ouput
5
RFout/in
Symetrical as RF Input/Ouput
6
GND
7
GND
8
DC2
Absolute Maximum Ratings^1,2
@ T = +25 °C
Parameter
Maximum Ratings
Operating Temperature
-40 °C to +85 °C
Storage Temperature
-65 °C to +150 °C
Junction Temperature
+175 °C
RF C.W. Incident Power
+33 dBm C.W.
Reversed Current @ -30 V
l -50nA l
Control Current
50mA per Diode
1. All the above are at Room Temperature except as noted
2. Exceeding the above Limits may cause permanent damage
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