MA4VAT2000-1277T Datasheet, PDF (1/4 Pages) Tyco Electronics – HMIC PIN Diode Variable Attenuator 1.70-2.20 GHz

HMIC PIN Diode Variable Attenuator
1.70-2.20 GHz
Features
• RoHs and ELV compliant
• Bandwidth: 1.70 GHz to 2.20 GHz
• 1.2 dB Insertion Loss, Typical
• 1.4:1 VSWR, Typical
• 24 dB Attenuation, Typical
• 40 dBm IIP3, Typical ( 1MHz Offset, @ +0dBm Pinc )
• 0-1.5 Volt Control Voltage.
• User can add an External Resistor for higher
D.C. Voltage requirements.
Extra Features
• Usable Bandwidth: 1.20 GHz to 2.50 GHz
• 1.5 dB Insertion Loss, Max
• 2:1 VSWR, Max
• 23 dB Attenuation, Max
Description and Applications
M/A-COM’s MA4VAT2000-1277T is a HMIC PIN
Diode Variable Attenuator which utilizes an integrated 90
degree 3dB hybrid with a pair of Silicon PIN Diodes
to perform the required attenuation function as
Voltage (Current) is applied. This device operates
from 0 to 1.5 Volts at 260 uA typical control current
for maximum attenuation. The user can add external
biasing resistors to the bias ports for higher voltage
requirements as required.
M/A-COM’s MA4VAT2000-1277T PIN Diode
Variable Attenuator is designed for AGC Circuit
Applications requiring:
• Lower Insertion Loss
• Lower distortion through attenuation
• Larger dynamic range for wide spread
spectrum applications
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
MA4VAT2000-1277T
V2
MLP 3mm Package
(Circuit Side View)
PIN 1
PIN 16
PIN Configuration
PIN
Function
PIN
Function
1
GND
9
DC2
2
GND
10
GND
3
GND
11
GND
4
GND
12
DC1
5
GND
13
GND
6
RF2
14
GND
7
GND
15
RF1
8
GND
16
GND
Center Paddle is RF and D.C. Ground
RF Input/Output Ports are Functionally Symmetrical
Absolute Maximum Ratings^1,2
Parameter
Maximum Ratings
Operating Temperature
-40 °C to +85 °C
Storage Temperature
-65 °C to +150 °C
Junction Temperature
+175 °C
RF C.W. Incident Power
+33 dBm C.W.
Reversed Current @ -30 V
l -50nA l
Control Current
50mA per Diode
1. All the above are at Room Temperature except as noted
2. Exceeding the above Limits may cause permanent damage
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