MA4SW410B-1 Datasheet, PDF (1/6 Pages) Tyco Electronics – SP4T PIN Diode with Integrated Bias Network

SP4T PIN Diode with
Integrated Bias Network
V 2.00
Features
n Broad Bandwith Specified from 2 to 18 GHz
n Integrated D.C. Bias Network
n Exceptional Isolation to Loss Ratio
n Rugged, Fully Monolithic, Glass Encapsulated
Construction
Outline Drawing
Description
The MA4SW410B-1 device is a SP4T Series-Shunt
Broad Band Switch with an Integrated Bias Network utilizing
M/A-COM's HMIC^TM (Heterolithic Microwave Integrated Circuit)
Process, US Patent 5,268,310. This process allows the
incorporation of silicon pedestals that form series and shunt diodes
or vias by imbedding them in a low loss, low dispersion glass. This
hybrid combination of Silicon and Glass gives HMIC Switches
exceptional low loss and remarkable high isolation through
Ku Band frequencies.
Applications
These High Performance Switches are suitable for use in
Multi-Band ECM, Radar, and Instrumentation Control Circuits
where High Isolation to Insertion Loss Ratios are Required. With a
Standard +5 V/-5 V, TTL Controlled PIN Diode Driver, 80 nS
Switching Speeds are Achieved.
Absolute Maximum Ratings¹
@ TA = +25 °C (unless otherwise
specified)
Parameter
Value
Operating Temperature
-65 °C to +125 °C
Storage Temperature
65 °C to +150 °C
RF C.W. Incident Power
(+/-20 mA)
DC Bias Current
+ 30 dBm
+/-40 mA
Nominal Die Dimensions
Dim
A
B
C
D
E
F
G
H
I
RF Bond
Pads
DC Bond
Pads
Thickness
Inches
Min
Max
.085
.058
.106
.110
.048
.052
.007
.011
.033
.034
.057
.061
0.77
.081
0.46
.050
.024
.028
.007 X .005 REF.
.005 X .005 REF.
005 REF.
Millimeters
Min
Max
2.17
2.27
2.69
2.79
1.22
1.32
0.17
0.27
0.85
0.86
1.46
1.56
1.96
2.06
1.18
1.28
0.61
0.71
.170 X .120 REF.
.125 X .125 REF.
.125 REF.
1. Exceeding any of these values may result in permanent
damage