MA4ST550 Datasheet, PDF (1/3 Pages) Tyco Electronics – High Q Hyperabrupt Tuning Varactors

High Q Hyperabrupt
Tuning Varactors
Features
q _{High Q}
q _{Usable Capacitance Change of 7:1}
q _{Low Reverse Leakage for Good Post}
Tuning Drift Characteristics
q _{Reproducible C-V Curves}
Description
The MA4ST550 family of high Q Silicon Hyperabrupt
Tuning Varactors is available in a series of low parasitic
capacitance microwave packages or in chip form.
The MA4ST550 series of diodes is available with junction
capacitances of approximately 0.8 pF to 8.2 pF at -4 volts.
These diodes have capacitance change ratios as high
as 7:1.
Applications
The MA4ST550 series is appropriate for use in VCOs with
frequencies within the range of approximately 1-14 GHz
where a large capacitance change is required. These
diodes are suited for VCOs in missile seekers, telecom-
munication systems and electronic warfare systems with
critical post tuning drift specifications.
Environmental Performance
All tuning varactors in ceramic packages are capable of
meeting the performance tests dictated by the methods
and procedures of the latest revisions of MIL-S-19500, MIL-
STD-202 and MIL-STD-750 which specify mechanical,
electrical, thermal and other environmental tests common
to semiconductor products.
Case Styles
MA4ST550 Series
V3.00
30
31
134
Absolute Maximum Ratings at 25°C
Parameter
Reverse Voltage
Operating Temperature
Storage Temperature
Temperature Coefficient
Absolute Maximum
Same as Breakdown Voltage
- 65°C to +150°C
- 65°C to +200°C
400 ppm/°C at -4 Volts
Specifications Subject to Change Without Notice.
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