MA4P7446F-1091T Datasheet, PDF (1/6 Pages) Tyco Electronics – Non Magnetic SMQ HIPAX PIN Diode

Non Magnetic SMQ HIPAX
PIN Diode
V 1.00
Features
n Non-Magnetic Package Suitable for MRI Applications
n Rectangular MELF SMQ Ceramic Package
n Hermetically Sealed
n Lower Rs for Lower Series Loss
n Longer τ_L for Lower Intermodulation Distortion
n Lower Cj for Higher Series Isolation
n Higher Average Incident Power Handling Capability
Description
The MA4P7446F-1091T is a surface mountable PIN diode
in a Non-Magnetic ( patent pending ) Metal Electrode
Leadless Faced (MELF) package. The device incorporates
M/A-COM’s proven HIPAX technology to produce a low
inductance ceramic package with no ribbons or whisker
wires. The package utilizes M/A-COM’s new
non- magnetic plating process to provide an extremely low
permeability, hermetically sealed package. Incorporated in
the package is a passivated PIN diode that is full face
bonded on both the cathode and anode of the chip to
maximize surface area for lower electrical and thermal
resistance. The MA4P7446F-1091T has been
comprehensively characterized both electrically and
mechanically to ensure repeatable and predictable
performance. This MA4P7446F-1091T Non-Magnetic
device is similar in electrical performance to the
MA4P4002F-1091T and MA4P4006F-1091T Magnetic part
numbers.
Designed for Automated Assembly
These SMQ PIN diodes are designed for high volume tape
and reel assembly. The rectangular package design provides
for highly efficient automatic pick and place assembly
techniques. The parallel flat surfaces are suitable for key
jaw or vacuum pickup techniques. All solder able surfaces
are tin plated and compatible with reflow and vapor phase
soldering methods.
Enviornmental Capability
HIPAX devices are applicable for use in industrial and
military applications and can be screened to meet the
environmental requirements of MIL-STD-750,
MIL-STD-202 as well as other military standards. The table
below lists some of the MIL-STD 750 tests the device is
designed to meet.
Applications
The diodes are well suited for use in low loss, low
distortion, and high power switching circuits applicable for
high magnetic field environments from HF through UHF
frequencies. The lower thermal resistance of this device
provides excellent higher average performance at RF power
incident levels up to 500 watts CW. This device is designed
to meet the most rigorous electrical and mechanical
requirements of MRI testing environments.
Test
High Temperature Storage
Temperature Shock
HTRB
Moisture Resistance
Gross Leak
Vibration Fatigue
Solderability
MIL-STD-750
Method
1031
1051
1038
1021
1071 Cond. E
2046
2026
Description
+150 °C, for 340 Hours
-65 °C to +125 °C, 20 Cycles
80% of rated V_B, +150 °C, for 96 Hours
No Initial Conditioning, 85 % RH, +85° C
Dye Penetrant Visual
20,000 G’s, 60 Hz, x, y, z axis
Test Temperature = +245 °C