MA4GP907 Datasheet, PDF (1/4 Pages) Tyco Electronics – GaAs Flip-Chip PIN Diodes

GaAs Flip-Chip PIN Diodes
V 5.00
Features
n Low Series Resistance, 4 Ω
n Ultra Low Capacitance, 25 fF
n High Switching Cutoff Frequency, 40 GHz
n 2 Nanosecond Switching Speed
n Can be Driven by Buffered TTL
n Silicon Nitride Passivation
n Polyimide Scratch Protection
Package Outline
Top View Is Shown With Diode Junction Up
Cathode
Description
M/A-COM's MA4GP907 is a Gallium Arsenide Flip-Chip PIN
diode.These devices are fabricated on OMCVD epitaxial
wafers using a process designed for high device uniformity and
extremely low parasitics. The diodes exhibit an extremely low
RC Product, ( 0.1 ps ) and 2 nS switching characteristics. They
are fully passivated with silicon nitride and have an additional
layer of a polymer for scratch protection.The protective
coatings prevent damage to the junction and the anode
airbridge during handling.
Applications
The 25 fF capacitance of the MA4GP907 allows use through
mmwave switch and switched phase shifter applications. This
diode is designed for use in pulsed or CW applications, where
single digit nS switching speed is required. For surface mount
assembly, the low capacitance of the MA4GP907 makes it
ideal for use in microwave multithrow switch assemblies,
where the series capacitance of each “off” port adversely loads
the input and affects VSWR.
Ordering Information
Part Number
MA4GP907
MA4GP907-T
MA4GP907-W
Packaging
Die in Carrier
Tape/Reel
Wafer on Frame
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