MA4AGFCP910 Datasheet, PDF (1/6 Pages) Tyco Electronics – AlGaAs Flip-Chip PIN Diode 100MHz to 50GHz

AlGaAs Flip-Chip PIN Diode
100MHz to 50GHz
MA4AGFCP910
Rev 2.0
Features
• Lower Series Resistance, 5.2Ω
• Ultra Low Capacitance, 18 f F
• High Switching Cutoff Frequency, 50 GHz
• 3 Nanosecond Switching Speed
• Driven by Standard TTL
• Silicon Nitride Passivation
• Polyimide Scratch Protection
Description
M/A-COM's MA4AGFCP910 is an Aluminum
Gallium Arsenide Flip-Chip PIN diode. These
devices are fabricated on OMCVD epitaxial
wafers using a process designed for high device
uniformity and extremely low parasitics. The
diodes exhibit an extremely low RC Product,
( 0.1 ps) and 3nS switching characteristics.
They are fully passivated with silicon nitride and
have an additional layer of a polymer for scratch
protection. The protective coatings prevent
damage to the junction and the anode airbridge
during handling.
Top View Shown Is With Diode Junction Up
Cathode
Package Outline
Electrical Specifications at T_A = 25 °C
Parameters and Test Conditions
Symbol Units
1 MHz & DC
Specifications
10 GHz Reference
Data^1,2
Total Capacitance at –5 V
RF Resistance at +10 mA
Forward Voltage at +10 mA
Reverse Breakdown Voltage at 10 uA³
Minority Carrier Lifetime
Min Typ. Max Min Typ. Max.
Ct
pF
0.018 0.021
0.018 .021
Rs
Ω
5.2
6.0
Vf
Volts
1.33 1.4
Vb
Volts
50
75
τ_L
nS
4.0
Notes:
1. Capacitance is determined by measuring Single Series Diode Isolation in a 50 ohm line at 10 GHz.
2. Forward Series Resistance is determined by measuring Single Series Diode Insertion Loss in a 50 ohm line at 10 GHz.
3. Reverse current will not exceed 10 microamperes at the Maximum Voltage Rating.
Specification Subject to Change Without Notice
M/A-COM Inc.
43 South Avenue, Burlington, MA 01803 USA
1
Telephone: [phone]