MA46H120 Datasheet, PDF (1/2 Pages) Tyco Electronics – GaAs Constant Gamma Flip- Chip Varactor Diode

Silicon Bipolar XXXXXXX (Headline)
Part Number
MA46H120
GaAs Constant Gamma Flip-
Chip Varactor Diode
Features
• Constant Gamma for Linear Tuning
• Low Parasitic Capacitance
• High Q
• Silicon Nitride Passivation
• Polyimide Scratch Protection
• Surface Mount Configuration
Description
M/A-COM’s MA46H120 is a gallium arsenide flip chip
hyperabrupt varactor diode. These devices are fabricated on
OMCVD epitaxial wafers using a process designed for high
device uniformity and extremely low parasitics. The
MA46H120 diodes are fully passivated with silicon nitride
and have an additional layer of polyimide for scratch
protection. The protective coatings prevent damage to the
junction during automated or manual handling. The flip chip
configuration is suitable for pick and place insertion.
Chip Layout
TOP VIEW
BOTTOM VIEW
Applications
The MA46H120 hyperabrupt GaAs tuning varactor is
designed for wide bandwidth VCOs and voltage tuned filters
where large capacitance change versus tuning voltage and
high Q are required. With a constant gamma of 1.0, these
diodes are particularly useful where highly predictable
frequency tuning is required.
Electrical Specifications @ TA = +25° C
Breakdown Voltage @ I_R = 10 µ A, V_B = 15V Minimum
C_T
C_T
C_T
(pF)
(pF)
(pF)
f=1MHz, V_R=0V
f=1MHz, V_R=4V
f=1MHz, V_R=10V
Min Typ Max Min Typ Max Min Typ Max
MA46H120
1.1
0.30
0.40 0.14
0.20
Q Factor
f=50MHz, V_R=4V
Min Typ Max
3000
Gamma
V_R=2-12V
Min Typ Max
0.9
1.1
M/A-COM Division Of AMP Incorporated n North America: Tel. [phone], Fax [phone] n Asia/Pacific: Tel. [phone], Fax [phone]
n Europe: Tel. [phone], Fax [phone]
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V3.00