MA02305AK Datasheet, PDF (1/5 Pages) Tyco Electronics – 3.0 V 100 mW RF Power Amplifier IC for Bluetooth

3.0 V 100 mW RF Power Amplifier
IC for Bluetooth
V 1.00
Features
n 20 dB Gain – dramatically increases range of your low
power Bluetooth devices
n Single 3.0V positive supply– operates over a wide
range of supply voltages
n Extremely small size – 6 pin SOT plastic package -
3 mm x 1.75 mm body size
n Output power easily controllable via V_DD1
n 45% Power Added Efficiency
n 100% Duty Cycle
n 2000 to 2900 MHz Operation
n Self-Aligned MSAG^®-Lite MESFET Process
MA02305AK
Description
The MA02305AK is an RF power amplifier based on M/A-
COM’s Self-Aligned MSAG^® MESFET Process. This
product is designed for use in 2.4 GHz ISM products as a
booster for high power Bluetooth devices. Output power
can be controlled to meet Bluetooth requirements via vary-
ing input power or the voltage on V_DD1.
Ordering Information
Part Number
MA02305AK-R7
MA02305AK-SMB
Package
7 inch, 3000 Piece Reel
MA02305AK Test Board
Maximum Ratings (TA = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DC Supply Voltage
V DD
5.5
V
RF Input Power
PIN
10
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range TSTG -40 to +150 °C
Electrical Characteristics: V_DD1 = 2.5 V, V_DD2 = 3 V, P_IN = +0 dBm, Duty Cycle = 100%, T _A = 25°C
Characteristic
Frequency Range
Symbol Min
Typ
Max Unit
ƒ
2400
2500 MHz
Output Power f = 2450 MHz
Power Added Efficiency f = 2450 MHz
Harmonics
Input VSWR
Off Isolation (VDD=0 V)
Thermal Resistance, junction to soldering point (pin 2)
Load Mismatch (VDD = 5.5 V, VSWR = 8:1, PIN = 0 dBm)
Stability (PIN = 0dBm, VDD = 0-5.5 V, Load VSWR = 5:1, fixed phases)
POUT
18.7
20
dBm
η
40
45
%
2ƒ
-30
-26
dBc
3ƒ
-27
-22
-
1.5
2.0
:1
S21
-25
dB
RT H
180
°C/W
-
No Degradation in Power Output
-
All non-harmonically related outputs
more than 60 dB below desired signal