MA02104AF Datasheet, PDF (1/4 Pages) Tyco Electronics – 3.6V 1.2W RF Power Amplifier IC for N-PCS/ISM900

Applications
Two-Way Paging
Wireless Modems
Cordless Telephones
Telemetry
900 MHz ISM
V_DD1
N/C
GND
GND
RF IN
GND
GND
N/C
3.6V 1.2W RF Power Amplifier IC
for N-PCS/ISM900
MA02104AF
Features
•= Single Positive Supply
•= 16 Pin TSSOP Plastic Package
•= Class AB Bias
•= 800 - 1000 MHz Operation
•= 50Ω Input Impedance
•= Single Capacitor Output Match
•= Self-Aligned MSAG^®-Lite MESFET Process
•= Guaranteed Stability and Ruggedness
V_DD2
GND
GND
GND
RF OUT/V_DD3
GND
GND
N/C
Typical 3.6 Volt Performance
30.8 dBm Power Output
30.8 dB Power Gain
60% Drain Efficiency (output stage FET)
45% Power Added Efficiency
-36 dBc 2^nd Harmonic
-54 dBc 3^rd Harmonic
ELECTRICAL CHARACTERISTICS VDD=3.6 V, PIN=0 dBm, TS=40 °C (Note 1), Output externally matched to 50 Ω System.
Characteristic
Symbol
Min
Typical Max
Unit
Frequency Range
ƒ
900
942
MHz
Output Power, f = 900 MHz
Power Added Efficiency , f = 900 MHz
P_OUT
η
30.4
40
30.9 31.5
45
dBm
%
Harmonics
2ƒ_o
−36
-31
dBc
3ƒ_o
−54
-40
dBc
Input VSWR
—
1.4:1 2.0:1
—
Thermal Resistance (Junction of 3^rd stage FET to solder point of R_{TH J-S}
47
°C/W
pin 13)
Load Mismatch (VDD = 4.6 V, PIN = +3 dBm, VSWR = 8:1)
—
No Degradation in Power Output
Stability (PIN = -15 to +3 dBm, VDD = 3.6, 4.6 V, TS = -40 to +100 °C,
—
Load VSWR = 8:1)
All non-harmonically related outputs
more than 60 dB below desired signal
Note 1: TS is the temperature measured at the soldering point of pin 13, mounted on 60 mil GETEK evaluation board in a free air condition with
ambient room temperature TA=25 °C. The electrical data presented herein was taken with the evaluation board shown in Figures 1 and 6,
under room temperature conditions and CW operation, unless otherwise specified.
Specifications subject to change without notice.
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901753 G