LF2810A Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, IOW, 28V 500 - 1000 MHz

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an AMP company
RF MOSFET Power
500 - 1000 MHz
Transistor,
IOW, 28V
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
Common Source Configuration
Lower Noise Floor
Applications
Broadband Linear Operation
500‘tiHz to 1200 MHz
Absolute Maximum Ratings at 25°C
LF281 OA
Electrical Characteristics at 25°C
F
6.22
6048
,245
z?ss
G
Ll4
1.40
,045
.055
H
2.92
310
.I15
x5
J
L40
1.65
,055
,065
K
1.96
2.46
-077
,097
L
3.61
4.37
642
572
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
Cass
CRSS
10 pF V,,=28.0 V, F=l .OMHz
4.8 pF V,,=26.0 V, F=l .OMHz
GP
10
-
dB V,,=28.0 V, I,,=1 00 mA, P,,=lO.O W, F=l .OGHz
q0
50
-
% V,,=28.0 V, I,,,=100 mA, P,,=lO.O W, F=l .OGHz
VSWR-T
-
2O:l
- V,,=28.0 V, I,,=1 00 mA, P,,=lO.O W, F=l .OGHz
Specifica!ions Subject to Change Without Notice.