LF2805A Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 5W, 28V 500 - 1000 MHz

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RF MOSFET Power Transistor, 5W, 28V
500 - 1000 MHz
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
Common Source Configuration
Lower Noise Floor
AppIications
. *Broadband Linear Operation
500 MHz to 1400 MHz
Absolute Maximum Ratings at 25°C
LF2805A
Electrical Characteristics at 25°C
Parameter
Symbol Min Max Units
lest Conditions
Drain-Source Breakdown Voltage
BV,,,
65
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V V,,=O.O V, 1,,=2.0 mA
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
ForwardTransconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
‘Dss
-
1.0 mA V,,=28.0 V, V,,=O.O V
I_GSS
1.0
p-4 v,,=20 v, v,,=o.o v
V_GSCTW
2.0
6.0
V
V&O.0 V, l,,=lO.O mA
GM
80
-
mS V&O.0 V, i&00.0 mA, AVGs=l .O V, 80 us Puke
C _ISS
7
PF ^{V&8.0 V, F-l.0 MHz}
Coss
5
PF ^{V,,=28.0 V, F-1 .OMHz}
C _RSS
2.4
pF V,,=28.0 V, F=l .OMHz
GP
10
-
dB V,,d8.0 V, I,,=50 mA, PO,+0 W, F=l .OGHz
‘1D
50
-
% V,,=28.0 V, I,,=50 mA, P,s5.0 W, F=l .OGHz
VSWR-T
-
2O:l
- V,,=28.0 V, I,,=50 mA, P,&%O W, F=l .OGHz