DU2880T Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz

an AMP comoanv
RF MOSFET Power Transistor, 8OW, 28V
2 - 175 MHz
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Competitive Devices
DU2880T
Absolute Maximum Ratings at 25°C
Thermal Resistance
Electrical Characteristics
I Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source LeakageCurrent
Gate Threshold Voltage
ForwardTransconductance
InputCapacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
at 25°C
1 Symbol 1 Min 1 Max ( Units 1
Test Conditions
BVDSS
65
-
V
V,,=O.O V, 1,,=20.0 mA
‘DSS
4.0
mA V,,=28.0 V, V,,=O.O V
‘GSS
4.0
pA v,,=20.0 v, v,,=o.o v
V _GSITHI
2.0
6.0
V
V&O.0 V, 1,,=400.0 mA
GM
2.0
-
S v,,=lo.o V, 1,,=4.0 A, AV,,=l .O V, 80 us Pulse
C _ISS
180
pF V,,=28.0 V, F=l .O MHz
C _ass
160
pF V,,=28.0 V, F=l .O MHz
%s
-
32
PF ^{V,,=28.0 V, F=l .O MHz}
GP
13
-
dB V,,=28.0 V, I,,=400 mA, P,,=80.0 W, F=175 MHz
%
60
-
% V,,=28.0 V. I,,=400 mA, P,,=80.0 W, F=175 MHz
VSWR-T
-
3O:l
-
V,,=28.0 V, I,,=400 mA, P,,,r=80.0 W, F=175 MHz
Specifications Subject to Change Without Notice.
North America:
Tel. (BOO) 366-2266
Fax [phone]
n Asia/Pacific: Tel. [phone]
Fax [phone]
M/A-COM, inc.
n
Europe:
Tel. [phone]
Fax [phone]