DU2840S Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 4OW, 28V 2 - 175 MHz

==
zI
an AMP company
RF M’OSFET
2 - 175 MHz
Power
Transistor,
4OW,28V
DU2840S
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Bipolar Devices
..
Absolute Maximum Ratings at 25°C
Parameter
1 Symbol ( Rating
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
JunctionTemperature
StorageTemperature
Thermal Resistance
V _DS
65
V _GS
20
1 ‘0s 1
8
PD
125
T,
200
T _STG
-55 to +150
8 _JC
1.4
Units
V
V
1* 1
W
“C
“C
“CiW
A
24.64
24.09
.970
.980
B i 18.29 t 18.54 1 ,720 1 ,730
D
E
F
G
m-
9.47 9.73 -373
,393
&22
6.48
.245
255
564
5.79
,222
E28
292
3.30
.115
.I30
Electrical Characteristics at 25°C
Parameter
) Symbol 1 Min 1 Max ( Units )
Test Conditions
I~~~ ^{Drain-Source Breakdown Voltage}
) BV,,,
1 55 1 ^{- ) V ) V,,=O.OV, l,,=lO.OmA}
I
Drain-Source Leakage Current
‘DSS
2.0
mA V,,=28.0 V, V,,=O.O V
I
Gate-Source Leakage Current
’05s
2.0
pA v,,=20.0 v, v,,=o.o v
Gate Threshold Voltage
ForwardTransconductance
V _GSrnHI 2.0
6.0
V V,,=lO.O V, 1,,=200.0 mA
GM
1
-
S
V,,=lO.O V, 1,,=2000.0 mA, AVo,=l .O V, 80 us Pulse
Input Capacitance
C _15s
90
pF V,=28.0 V, F=l .O MHz
Output Capacitance
C ₀₅₅
80
pF V,,=28.0 V. F=l .O MHz
Reverse Capacitance
Power Gain
I
C _{E-1- c.s}
16
pF V,,=28.0 V, F=l .O MHz
1 G,
13
- 1 dB 1 V,,=28.0 V, I,,=200 mA, P,_{_},_.,-40.0 W, F=l75 MHz
I
Drain Efficiency
‘1D
60
-
% V,,=28.0 V, I,,=200 mA, P,,=40.0 W, F=175 MHz
Load MismatchTolerance
VSWR-T
-
3O:l
-
V,,=28.0 V, I,,=200 mA, P,,=40.0 W, F=175 MHz
Specifications Subject to Change Without Notice.
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= Asia/Pacific:
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Fax ~81 (03) 3226-1451
M/A-COM, inc.
=
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